CPC H01L 21/326 (2013.01) [H01L 21/02107 (2013.01); H01L 21/0425 (2013.01); H01L 21/42 (2013.01)] | 23 Claims |
1. A system for processing semiconductor wafers, the system comprising:
a processing chamber;
a heat source;
a substrate holder configured to expose a semiconductor wafer to the heat source;
a first electrode configured to be detachably attached to the semiconductor wafer, a conductive outer surface of the first electrode configured to be in physical contact with a first major surface of the semiconductor wafer when the first electrode is attached detachably to the semiconductor wafer; and
a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.
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