CPC H01L 21/31144 (2013.01) [H01L 21/0337 (2013.01); H01L 21/32139 (2013.01); H01L 21/76816 (2013.01); H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01)] | 20 Claims |
1. A method comprising:
forming a first material layer over a substrate;
forming a second material layer over the first material layer;
forming a first trench in the second material layer, wherein the first trench extends along a first direction;
forming a first spacer layer in the first trench;
after forming the first spacer layer in the trench, forming a second trench in the second material layer;
removing a first portion of the first material layer to extend the first trench into the first material layer and removing a second portion of the first material layer to extend the second trench into the first material layer thereby forming a patterned first material layer;
forming a third material layer over the patterned first material layer;
forming a third trench extending through the third material layer to thereby form a patterned third material layer, wherein the third trench extends along a second direction that is different than the first direction, wherein the third trench overlaps the extended first trench; and
removing a third portion of the patterned first material layer through the third trench.
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