US 11,894,230 B2
Tribological properties of diamond films
Vicknesh Sahmuganathan, Singapore (SG); Jiteng Gu, Singapore (SG); Eswaranand Venkatasubramanian, Santa Clara, CA (US); Kian Ping Loh, Singapore (SG); Abhijit Basu Mallick, Sunnyvale, CA (US); John Sudijono, Singapore (SG); and Zhongxin Chen, Singapore (SG)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US); and National University of Singapore, Singapore (SG)
Filed on Jan. 25, 2023, as Appl. No. 18/101,317.
Application 18/101,317 is a division of application No. 17/007,441, filed on Aug. 31, 2020, granted, now 11,594,416.
Prior Publication US 2023/0170217 A1, Jun. 1, 2023
Int. Cl. H10B 41/27 (2023.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0332 (2013.01) [H01L 21/0337 (2013.01); H10B 41/27 (2023.02); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory stack comprising a plurality of alternating layers of a first material and a second material on a substrate;
a first nanocrystalline diamond layer on the memory stack, the first nanocrystalline diamond layer having a first thickness, a first roughness of greater than about 25 nm, a first hardness, an sp3 content of greater than 80%, and a crystal size in a range of from 2 nm to 5 nm;
a second nanocrystalline diamond layer on the first nanocrystalline diamond layer, the second nanocrystalline diamond layer having a second thickness, an sp3 content of greater than 80%, a crystal size in a range of from 2 nm to 5 nm, and a second roughness of less than about 15 nm; and
a memory channel extending from a top surface of the memory stack to the substrate.