US 11,894,225 B2
Indium phosphide substrate, semiconductor epitaxial wafer, and method for producing indium phosphide substrate
Shunsuke Oka, Kitaibaraki (JP); Hideki Kurita, Kitaibaraki (JP); and Kenji Suzuki, Kitaibaraki (JP)
Assigned to JX METALS CORPORATION, Tokyo (JP)
Appl. No. 17/289,524
Filed by JX METALS CORPORATION, Tokyo (JP)
PCT Filed Jun. 4, 2020, PCT No. PCT/JP2020/022198
§ 371(c)(1), (2) Date Apr. 28, 2021,
PCT Pub. No. WO2021/106249, PCT Pub. Date Jun. 3, 2021.
Claims priority of application No. 2019-217552 (JP), filed on Nov. 29, 2019; and application No. 2020-078636 (JP), filed on Apr. 27, 2020.
Prior Publication US 2022/0310382 A1, Sep. 29, 2022
Int. Cl. H01L 21/02 (2006.01); B28D 5/04 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 33/10 (2006.01); H01L 29/20 (2006.01)
CPC H01L 21/02019 (2013.01) [B28D 5/042 (2013.01); C30B 25/186 (2013.01); C30B 29/40 (2013.01); C30B 33/10 (2013.01); H01L 29/20 (2013.01)] 13 Claims
 
1. An indium phosphide substrate comprising a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface,
wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.