US 11,894,217 B2
Plasma ignition optimization in semiconductor processing chambers
Soonwook Jung, Campbell, CA (US); and Kenneth D. Schatz, Los Altos, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 21, 2023, as Appl. No. 18/112,207.
Application 18/112,207 is a continuation of application No. 17/100,927, filed on Nov. 22, 2020, granted, now 11,587,765.
Prior Publication US 2023/0197405 A1, Jun. 22, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/311 (2006.01)
CPC H01J 37/32082 (2013.01) [H01J 37/32926 (2013.01); H01L 21/31116 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers, the method comprising:
accessing a plurality of input parameters for a processing chamber, wherein the plurality of input parameters are in part derived from a recipe for the processing chamber to perform a process on a substrate;
providing the plurality of input parameters for the processing chamber to a model, wherein the model has been trained using previous pluralities of input parameters and corresponding pluralities of sensor measurements;
receiving one or more first outputs from the model that indicate a predicted first amount of RF power that will be reflected back from the processing chamber to an RF source when igniting a plasma in the processing chamber; and
adjusting the plurality of input parameters based on the predicted first amount of RF power that is reflected back from the processing chamber.