US 11,894,211 B2
Electron beam apparatus and method for controlling electron beam apparatus
Erina Kawamoto, Tokyo (JP); Soichiro Matsunaga, Tokyo (JP); Souichi Katagiri, Tokyo (JP); Keigo Kasuya, Tokyo (JP); Takashi Doi, Tokyo (JP); Tetsuya Sawahata, Tokyo (JP); and Minoru Yamazaki, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Appl. No. 17/621,503
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Jul. 2, 2019, PCT No. PCT/JP2019/026322
§ 371(c)(1), (2) Date Dec. 21, 2021,
PCT Pub. No. WO2021/001932, PCT Pub. Date Jan. 7, 2021.
Prior Publication US 2022/0351934 A1, Nov. 3, 2022
Int. Cl. H01J 37/077 (2006.01); H01J 37/075 (2006.01); H01J 37/18 (2006.01)
CPC H01J 37/077 (2013.01) [H01J 37/075 (2013.01); H01J 37/18 (2013.01); H01J 2237/006 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An electron beam apparatus that includes an electron gun configured to emit an electron beam and an electron gun chamber to which a sputter ion pump and a non-evaporable getter pump are connected, the electron beam apparatus comprising:
a gas supply unit configured to supply at least one gas, wherein the gas is at least one of hydrogen, oxygen, carbon monoxide, and carbon dioxide to the electron gun chamber,
wherein
the gas supply unit includes a gas generation source configured to generate the at least one gas,
the gas generation source is an alloy configured to occlude the at least one gas,
the alloy is a same material as the non-evaporable getter pump, and
a surface area of the alloy is smaller than a surface area of the non-evaporable getter pump.