US 11,894,172 B2
Domain wall moving element, domain wall moving type magnetic recording element and magnetic recording array
Tetsuhito Shinohara, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Appl. No. 17/290,118
Filed by TDK CORPORATION, Tokyo (JP)
PCT Filed Nov. 6, 2018, PCT No. PCT/JP2018/041162
§ 371(c)(1), (2) Date Apr. 29, 2021,
PCT Pub. No. WO2020/095360, PCT Pub. Date May 14, 2020.
Prior Publication US 2021/0398726 A1, Dec. 23, 2021
Int. Cl. H01F 10/32 (2006.01); H10N 50/80 (2023.01); H10N 50/10 (2023.01); H01L 29/82 (2006.01); H10B 99/00 (2023.01); H10N 50/85 (2023.01); H01L 27/105 (2023.01); H10B 61/00 (2023.01)
CPC H01F 10/3272 (2013.01) [H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01L 27/105 (2013.01); H01L 29/82 (2013.01); H10B 99/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H01F 10/3254 (2013.01); H10B 61/00 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A domain wall moving element, comprising:
a domain wall moving layer in which first layers containing a rare earth metal and second layers containing a transition metal are alternately stacked in a first direction; and
a first electrode and a second electrode which face the domain wall moving layer and are arranged to be away from each other,
wherein the domain wall moving layer has spin-orbit torque (SOT) suppression parts which are positioned in one of interfaces between the first layers and the second layers and contain a non-magnetic metal, and
the SOT suppression parts are locally distributed at the interface.