US 11,894,088 B2
Method for reading and writing and memory device
Shuliang Ning, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 14, 2021, as Appl. No. 17/347,525.
Application 17/347,525 is a continuation of application No. PCT/CN2020/130390, filed on Nov. 20, 2020.
Claims priority of application No. 202010249662.8 (CN), filed on Apr. 1, 2020.
Prior Publication US 2021/0313003 A1, Oct. 7, 2021
Int. Cl. G11C 29/12 (2006.01); G11C 29/18 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); H03K 19/17728 (2020.01)
CPC G11C 29/42 (2013.01) [G11C 29/1201 (2013.01); G11C 29/18 (2013.01); G11C 29/4401 (2013.01); H03K 19/17728 (2013.01); G11C 2029/1802 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for reading and writing, comprising:
applying a read command to a memory device, the read command pointing to address information;
reading data to be read out from a memory cell corresponding to the address information pointed to by the read command;
setting a mark of the address information pointed to by the read command as invalid if an error occurs in the data to be read out, and backing up the address information pointed to by the read command and the mark into a non-volatile memory cell according to a preset rule, wherein the preset rule is a preset cycle or a preset action; and
loading the address information and the mark from the non-volatile memory cell after the memory device is enabled, wherein address information not marked as invalid is initially set as valid.