US 11,894,082 B2
Anti-fuse memory and control method thereof
Rumin Ji, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Apr. 2, 2022, as Appl. No. 17/712,070.
Claims priority of application No. 202111602083.8 (CN), filed on Dec. 24, 2021.
Prior Publication US 2023/0207030 A1, Jun. 29, 2023
Int. Cl. G11C 17/16 (2006.01); H01L 23/525 (2006.01); G11C 17/18 (2006.01); H10B 20/20 (2023.01)
CPC G11C 17/165 (2013.01) [G11C 17/18 (2013.01); H01L 23/5252 (2013.01); H10B 20/20 (2023.02)] 16 Claims
OG exemplary drawing
 
1. An anti-fuse memory configured to generate a programming pulse signal based on a row strobe signal, a word line of the anti-fuse memory being configured to receive the row strobe signal, and the anti-fuse memory being programmed in response to the programming pulse signal;
wherein the anti-fuse memory is further configured to generate the programming pulse signal with an adjustable duty factor based on the row strobe signal.