CPC G11C 16/3495 (2013.01) [G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01)] | 17 Claims |
1. A method for programming a target memory cell of a memory array of a non-volatile memory system, comprising:
determining a total number of erase/programming (EP) cycles applied previously to the target memory cell;
comparing the total number of erase/programming (EP) cycles to a threshold value; and
applying an asymmetric programming scheme as a result of determining that the total number of erase/programming (EP) cycles does not exceed a threshold value; and
applying a symmetric programming scheme as a result of determining that the total number of erase/programming (EP) cycles exceeds the threshold value.
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