US 11,894,071 B2
Non-volatile memory with differential temperature compensation for bulk programming
Yi Song, San Jose, CA (US); Dengtao Zhao, Santa Clara, CA (US); Sarath Puthenthermadam, San Jose, CA (US); and Jiahui Yuan, Fremont, CA (US)
Assigned to SanDisk Technologies LLC, Addison, TX (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Dec. 13, 2021, as Appl. No. 17/549,457.
Prior Publication US 2023/0197168 A1, Jun. 22, 2023
Int. Cl. G11C 16/28 (2006.01); G11C 16/10 (2006.01); G11C 7/04 (2006.01); G11C 16/26 (2006.01)
CPC G11C 16/28 (2013.01) [G11C 7/04 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A non-volatile storage apparatus, comprising:
a plurality of non-volatile memory cells configured to store data, the data divided into a plurality of groups of data; and
a control circuit connected to the memory cells, the control circuit is configured to:
program and read with differential temperature compensation based on a differential between temperature at time of programming and temperature at time of reading for data programmed as a complete group of data, and
program and read without differential temperature compensation based on a differential between temperature at time of programming and temperature at time of reading for data programmed as a partial group of data.