US 11,894,056 B2
Non-volatile memory with efficient word line hook-up
Shiqian Shao, Fremont, CA (US); and Fumiaki Toyama, Cupertino, CA (US)
Assigned to SanDisk Technologies LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Feb. 22, 2022, as Appl. No. 17/677,907.
Prior Publication US 2023/0268001 A1, Aug. 24, 2023
Int. Cl. G11C 16/08 (2006.01); G11C 16/10 (2006.01); H01L 23/00 (2006.01); G11C 16/04 (2006.01)
CPC G11C 16/08 (2013.01) [G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H01L 24/14 (2013.01); H01L 2224/17104 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A non-volatile storage apparatus, comprising:
a three dimensional non-volatile memory structure that includes word lines connected to non-volatile memory cells, the non-volatile memory cells are arranged in blocks; and
one or more control circuits connected to the word lines, the one or more control circuits are configured to perform one or more memory operations on the three dimensional non-volatile memory structure, the one or more control circuits comprise word line switches connected to the word lines and one or more sources of voltage, the word line switches are arranged in groups of X word line switches such that each group of X word line switches is positioned in a line under Y blocks of non-volatile memory cells and has a length that is equal to the width of the Y blocks of non-volatile memory cells, X>Y.