CPC G11C 11/5642 (2013.01) [G11C 11/5671 (2013.01); G11C 16/26 (2013.01)] | 20 Claims |
1. A memory apparatus, comprising:
memory cells each connected to one of a plurality of word lines and disposed in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states; and
a control means coupled to the plurality of word lines and the strings and configured to:
apply a read voltage to a selected ones of the plurality of word lines during a read operation and ramp down to a discharge voltage at an end of the read operation and apply a ready voltage to the selected ones of the plurality of word lines during a ready period of time following the read operation, and
adjust at least one of the discharge voltage and the ready voltage based on a temperature of the memory apparatus.
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