US 11,894,051 B2
Temperature-dependent word line voltage and discharge rate for refresh read of non-volatile memory
Dong-Il Moon, San Jose, CA (US); Abhijith Prakash, Milpitas, CA (US); Wei Zhao, Fremont, CA (US); and Henry Chin, San Jose, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on May 24, 2022, as Appl. No. 17/752,524.
Prior Publication US 2023/0410901 A1, Dec. 21, 2023
Int. Cl. G11C 7/00 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01)
CPC G11C 11/5642 (2013.01) [G11C 11/5671 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory apparatus, comprising:
memory cells each connected to one of a plurality of word lines and disposed in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states; and
a control means coupled to the plurality of word lines and the strings and configured to:
apply a read voltage to a selected ones of the plurality of word lines during a read operation and ramp down to a discharge voltage at an end of the read operation and apply a ready voltage to the selected ones of the plurality of word lines during a ready period of time following the read operation, and
adjust at least one of the discharge voltage and the ready voltage based on a temperature of the memory apparatus.