US 11,894,048 B2
Control amplifying circuit, sense amplifier and semiconductor memory
Weibing Shang, Anhui (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 15, 2022, as Appl. No. 17/807,135.
Application 17/807,135 is a continuation of application No. PCT/CN2022/079726, filed on Mar. 8, 2022.
Claims priority of application No. 202111657770.X (CN), filed on Dec. 31, 2021.
Prior Publication US 2023/0223071 A1, Jul. 13, 2023
Int. Cl. G11C 11/40 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4074 (2006.01); G11C 7/12 (2006.01)
CPC G11C 11/4091 (2013.01) [G11C 11/4074 (2013.01); G11C 11/4094 (2013.01); G11C 7/12 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A control amplifying circuit, comprising:
a power supply output circuit, configured to receive a power supply switching signal, and select one of at least two preset voltage values according to the power supply switching signal to output as a preset power supply signal;
an isolation control circuit, configured to receive a control command signal and the preset power supply signal, and generate an isolation control signal according to the control command signal; and
an amplifying circuit, configured to receive the isolation control signal and a signal to be processed, and amplify the signal to be processed based on the isolation control signal to obtain a target amplified signal.