US 11,894,042 B2
Method for refreshing row hammer, circuit for refreshing row hammer and semiconductor memory
Jixing Chen, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 17, 2022, as Appl. No. 17/807,478.
Application 17/807,478 is a continuation of application No. PCT/CN2022/072108, filed on Jan. 14, 2022.
Claims priority of application No. 202111399125.2 (CN), filed on Nov. 19, 2021.
Prior Publication US 2023/0162777 A1, May 25, 2023
Int. Cl. G11C 11/406 (2006.01); G11C 11/408 (2006.01)
CPC G11C 11/40615 (2013.01) [G11C 11/4085 (2013.01); G11C 11/40622 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for refreshing a row hammer, comprising:
determining a row hammer refresh instruction for a target word line;
setting, according to the row hammer refresh instruction, a preset row hammer refresh signal to a valid state, wherein the valid state of the preset row hammer refresh signal indicates that the row hammer refresh instruction is performed in a first refresh period; and
in response to detecting that the row hammer refresh instruction is not completed within the first refresh period, continuing the valid state of the preset row hammer refresh signal to a next refresh period of the first refresh period.