US 11,893,284 B2
Method, device and system for testing memory devices
Xinwang Chen, Hefei (CN); Maosong Ma, Hefei (CN); and Jianbin Liu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Oct. 29, 2021, as Appl. No. 17/452,857.
Application 17/452,857 is a continuation of application No. PCT/CN2021/108901, filed on Jul. 23, 2021.
Claims priority of application No. 202110812751.3 (CN), filed on Jul. 19, 2021.
Prior Publication US 2023/0015543 A1, Jan. 19, 2023
Int. Cl. G06F 3/06 (2006.01); G11C 29/08 (2006.01)
CPC G06F 3/0679 (2013.01) [G11C 29/08 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for testing memory devices, the method comprising:
receiving a test instruction, the test instruction being used to characterize a model of a memory device to be tested that is connected to a test platform;
selecting, according to the test instruction, a testing method corresponding to the model of the memory device to be tested from a plurality of pre-stored testing methods as a target testing method; and
executing the target testing method to test the memory device to be tested.