US 11,893,239 B2
Quasi-synchronous protocol for large bandwidth memory systems
Krishna T. Malladi, San Jose, CA (US); and Hongzhong Zheng, Los Gatos, CA (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 10, 2020, as Appl. No. 16/787,002.
Application 16/787,002 is a continuation of application No. 15/821,688, filed on Nov. 22, 2017, granted, now 10,592,121.
Claims priority of provisional application 62/558,741, filed on Sep. 14, 2017.
Claims priority of provisional application 62/558,726, filed on Sep. 14, 2017.
Claims priority of provisional application 62/558,732, filed on Sep. 14, 2017.
Prior Publication US 2020/0174676 A1, Jun. 4, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G06F 13/16 (2006.01); G06F 12/02 (2006.01); G06F 15/78 (2006.01); G06F 13/42 (2006.01)
CPC G06F 3/0611 (2013.01) [G06F 3/068 (2013.01); G06F 3/0659 (2013.01); G06F 12/02 (2013.01); G06F 13/1615 (2013.01); G06F 13/1689 (2013.01); G06F 13/4243 (2013.01); G06F 15/7821 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system, comprising:
a high-bandwidth memory (HBM) apparatus comprising processing-in-memory (PIM) functionality;
wherein the HBM apparatus comprises a logic circuit that:
receives a first command and a second command from a host device using a first interface, wherein the first command has a first type and the second command has a second type; and
converts the first command to a first PIM command according to a first PIM protocol based on the first type;
converts the second command to a second PIM command according to a second PIM protocol based on the second type; and
initiates transmission of the first PIM command and the second PIM command to the PIM functionality using a second interface;
wherein the logic circuit provides, to the host, an estimated completion time for an execution of the first PIM command; and
the logic circuit receives a third command from the host using the first interface, based on the estimated completion time.