CPC G03F 7/0757 (2013.01) [G03F 7/0045 (2013.01); G03F 7/16 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01)] | 16 Claims |
1. A photosensitive resin composition comprising:
(A) a resin;
(B) a photosensitizer;
(C) a surfactant comprising a structural unit represented by the following average composition formula (1); and
(D) a solvent,
(R1R2Y2SiO1/2)2(R3Y1SiO2/2)l(R5R6SiO2/2)n(R4SiO3/2)m (1)
wherein Y1 and Y2 each independently represent a hydrogen atom, a methyl group, a phenyl group, or a group represented by the following general formula (2), at least one of Y1 and Y2 is a group represented by the following general formula (2), R1 to R6 are monovalent hydrocarbon groups that may be the same or different and optionally contain a heteroatom, having 1 to 20 carbon atoms, “1” and “n” are each independently integers of 1 to 100, and “m” is an integer of 0 to 100,
wherein a dotted line represents a bond, R9, R10, and R11 each independently represent a linear or branched alkylene group having 2 to 10 carbon atoms where R10 is different from R11, R12 represents a trivalent hydrocarbon group having 2 to 10 carbon atoms, R13 represents a structure having one or more repeating units selected from (OR10), (OR11), and (OR12), R14 represents a linear or branched alkyl ester group having 2 to 10 carbon atoms, “a” represents an integer of 1 to 50, “b” represents an integer of 0 to 50, “c” represents an integer of 0 to 50, “d” represents an integer of 1 to 20;
and —OR10—, —OR11—, and —OR12(R13)— may be in a random order.
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9. A patterning process comprising:
(I) forming a photosensitive material film by coating a substrate with the photosensitive resin composition according to claim 1;
(II) subsequently, after a heat treatment, exposing the photosensitive material film with a high-energy beam having a wavelength of 190 to 500 nm or an electron beam via a photomask; and
(III) developing with a developer of an alkaline aqueous solution or an organic solvent.
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