US 11,892,529 B2
Monolayer transition metal dichalcogenides having giant valley-polarized Rydberg excitons revealed by magneto-photocurrent spectroscopy
Sufei Shi, Albany, NY (US); and Tianmeng Wang, Troy, NY (US)
Assigned to Rensselaer Polytechnic Institute, Troy, NY (US)
Filed by Sufei Shi, Albany, NY (US); and Tianmeng Wang, Troy, NY (US)
Filed on Dec. 30, 2021, as Appl. No. 17/565,806.
Claims priority of provisional application 63/154,876, filed on Mar. 1, 2021.
Prior Publication US 2022/0276325 A1, Sep. 1, 2022
Int. Cl. G01R 33/20 (2006.01); G01J 4/00 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01)
CPC G01R 33/20 (2013.01) [G01J 4/00 (2013.01); H01L 29/24 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transition metal dichalcogenides device comprising:
a substrate;
a bottom layer of boron nitride;
a tungsten diselenide monolayer positioned on the bottom layer of boron nitride;
a top layer of boron nitride positioned on the tungsten diselenide monolayer such that the bottom layer of boron nitride and the top layer of boron nitride at least partially encapsulate the tungsten diselenide monolayer;
a source electrode positioned on the substrate;
a drain electrode positioned on the substrate; and
a top gate electrode positioned on the top layer of boron nitride.