CPC G01R 33/20 (2013.01) [G01J 4/00 (2013.01); H01L 29/24 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A transition metal dichalcogenides device comprising:
a substrate;
a bottom layer of boron nitride;
a tungsten diselenide monolayer positioned on the bottom layer of boron nitride;
a top layer of boron nitride positioned on the tungsten diselenide monolayer such that the bottom layer of boron nitride and the top layer of boron nitride at least partially encapsulate the tungsten diselenide monolayer;
a source electrode positioned on the substrate;
a drain electrode positioned on the substrate; and
a top gate electrode positioned on the top layer of boron nitride.
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