US 11,892,382 B2
Method for detecting environmental parameter in semiconductor fabrication facility
Chih-Ming Tsao, Miaoli County (TW); and Tzu-Sou Chuang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/460,020.
Prior Publication US 2023/0066693 A1, Mar. 2, 2023
Int. Cl. G01N 1/24 (2006.01); G01N 1/22 (2006.01); G08B 3/10 (2006.01)
CPC G01N 1/24 (2013.01) [G01N 1/2273 (2013.01); G08B 3/10 (2013.01); G01N 1/2205 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of monitoring a semiconductor fabrication facility, comprising:
collecting an ambient air in a clean room through a plurality of gas lines with their gas inlets arranged at a plurality of sampling positions in the clean room;
measuring a parameter of the ambient air by a plurality of metrology devices which are connected to the gas lines, wherein at least two of the sampling positions are measured simultaneously through at least two of the metrology devices; and
issuing a warning when the parameter detected by the metrology devices is outside a range of acceptable values.