US 11,891,718 B2
Method and apparatus for growing silicon single crystal ingot
Hyun Ju Hwang, Gyeongsangbuk-do (KR); Sang Hee Kim, Gyeongsangbuk-do (KR); and Kyung Tae Park, Gyeongsangbuk-do (KR)
Assigned to SK SILTRON CO., LTD., Gyeongsangbuk-do (KR)
Filed by SK Siltron Co., LTD., Gyeongsangbuk-do (KR)
Filed on Jan. 19, 2022, as Appl. No. 17/578,573.
Claims priority of application No. 10-2021-0018275 (KR), filed on Feb. 9, 2021.
Prior Publication US 2022/0251724 A1, Aug. 11, 2022
Int. Cl. C30B 15/22 (2006.01); C30B 29/06 (2006.01); C30B 15/10 (2006.01); C30B 15/14 (2006.01); C30B 15/36 (2006.01)
CPC C30B 15/22 (2013.01) [C30B 15/10 (2013.01); C30B 15/14 (2013.01); C30B 15/36 (2013.01); C30B 29/06 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method of growing a silicon single crystal ingot, the method comprising:
growing a silicon single crystal ingot having crystal orientation of (111) using Czochralski method;
determining a diameter of the silicon single crystal ingot;
calculating a length of a facet of the silicon single crystal ingot;
determining a correction for a rotation speed of a seed or a pulling speed of the silicon single crystal ingot based on the calculated facet length; and
correcting the rotation speed of the seed or the pulling speed of the silicon single crystal ingot based on the determined correction,
wherein, in the calculating the length of the facet, a change in the diameter of the silicon single crystal ingot caused by the rotation of the seed is measured by an automatic diameter control (ADC) sensor at intervals of ten times per second,
wherein the calculating of the length of the facet includes calculating a facet length S1 by a formula of S1=2R×sin(3B), where B rpm (revolutions per minute) denotes a rotation speed of the seed and R denotes the diameter of the silicon single crystal ingot,
wherein the determining of the correction includes determining of the correction of at least one of the rotation speed of the seed and the pulling speed of the silicon single crystal ingot when an absolute value of a difference between the calculated facet length S1 and a preset facet length S0 exceeds 5 mm, and
wherein the determining the correction of the rotation speed of the seed includes:
when the calculated facet length Si is greater than the preset facet length S0, determining the rotation speed of the seed to be reduced by a value obtained by multiplying a value of S1−S0 by a first correction factor, and
when the calculated facet length S1 is smaller than the preset facet length S0, determining the rotation speed of the seed to be increased by the value obtained by multiplying the value of S1−S0 by the first correction factor.