US 11,891,694 B2
Atomic-layer-deposition equipment and atomiclayer-deposition method by using the same
Jing-Cheng Lin, Hsinchu County (TW)
Assigned to SKY TECH INC., Hsinchu County (TW)
Filed by SKY TECH INC., Hsinchu County (TW)
Filed on Dec. 27, 2021, as Appl. No. 17/562,882.
Prior Publication US 2023/0203653 A1, Jun. 29, 2023
Int. Cl. C23C 16/455 (2006.01); H01L 21/673 (2006.01); H01L 21/687 (2006.01)
CPC C23C 16/45544 (2013.01) [C23C 16/45527 (2013.01); C23C 16/45563 (2013.01); H01L 21/67346 (2013.01); H01L 21/68792 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An atomic-layer-deposition equipment, comprising:
a reaction chamber, comprising a containing space;
a carrier, disposed within the containing space and including a carrying surface;
a coverage mechanism comprising:
a cover plate, disposed within the containing space and facing the carrying surface of the carrier; and
a connecting shaft, interconnecting the reaction chamber and the cover plate; wherein the carrier is configured to be moved to approach the cover plate; and
a dispensing unit, disposed to surround the cover plate and fluidly connected to the containing space of the reaction chamber; wherein the dispensing unit is configured to transfer and dispense at least one precursor into the containing spacer;
wherein the dispensing unit comprises a first annular pipeline and a plurality of first gas inlets; the first annular pipeline surrounds the cover plate; and the first gas inlets are fluidly connected to the first annular pipeline, and the first gas inlets face the cover plate or an underside of the cover plate, for transferring and dispensing the at least one precursor into the containing space.