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1. An apparatus for depositing one or more variable interference filters onto one or more substrates, the apparatus comprising a vacuum chamber, at least one magnetron sputtering device and at least one movable mount for supporting the one or more substrates within the vacuum chamber, the at least one magnetron sputtering device being configured to sputter material from a sputtering target towards the mount, thereby defining a sputtering zone within the vacuum chamber, wherein at least one static sputtering mask is located between the sputtering target and the mount, the at least one static sputtering mask being configured such that, when each substrate is moved through the sputtering zone on the at least one movable mount, a layer of material having a non-uniform thickness is deposited on each said substrate, wherein the at least one static sputtering mask is configured to deposit one or more variable interference filters onto one or more substrates and is configured to take into account the angular distribution of the sputtered material, wherein the apparatus comprises at least one plasma processing device configured to direct plasma-generated gas ions towards the mount, thereby defining a plasma treatment zone within the vacuum chamber, and wherein the at least one movable mount is a drum and the apparatus further comprises at least one deposition sensor and one or more apertures provided in the drum, such that when the drum rotates, the material sputtered by the at least one magnetron sputtering device reaches and is deposited onto the at least one deposition sensor when said one or more apertures are provided directly between the at least one deposition sensor and the at least one magnetron sputtering device and that the material sputtered by the at least one magnetron sputtering device is prevented from being deposited onto the at least one deposition sensor when said one or more apertures are rotated out of alignment with the at least one magnetron sputtering device.
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