US 11,891,556 B2
Nitride phosphor, method for manufacturing the same, and light emitting device
Shigeyuki Suzuki, Tokushima (JP); Hiroyuki Watanabe, Itano-gun (JP); and Shoji Hosokawa, Tokushima (JP)
Assigned to NICHIA CORPORATION, Anan (JP)
Filed by NICHIA CORPORATION, Anan (JP)
Filed on Apr. 20, 2023, as Appl. No. 18/304,004.
Application 18/304,004 is a division of application No. 17/806,442, filed on Jun. 10, 2022, granted, now 11,692,135.
Claims priority of application No. 2021-098090 (JP), filed on Jun. 11, 2021; and application No. 2021-168122 (JP), filed on Oct. 13, 2021.
Prior Publication US 2023/0250335 A1, Aug. 10, 2023
Int. Cl. B22F 3/10 (2006.01); C09K 11/77 (2006.01)
CPC C09K 11/77348 (2021.01) [B22F 3/1017 (2013.01); C09K 11/7731 (2013.01); C09K 11/7739 (2013.01); C09K 11/77346 (2021.01); C09K 11/77347 (2021.01)] 7 Claims
OG exemplary drawing
 
1. A method for manufacturing a nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element comprising at least one selected from the group consisting of Mg, Ca, Sr, and Ba,
the composition having a ratio of a total molar content of the group 2 element and Eu to a molar content of Al of 0.8 or more and 1.1 or less, a molar ratio of Eu of 0.002 or more and 0.08 or less, a molar ratio of Si of 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al of 1.8 or more and 2.2 or less, the method comprising:
performing a first heat treatment of a raw material mixture containing a group 2 element source, an Eu source, a Si source, and an Al source in a closed container made of tungsten at a temperature of 1200° C. or higher and 1600° C. or lower to obtain a first heat-treated product; and
performing a second heat treatment of the first heat-treated product in a closed container made of tungsten at a temperature of 1800° C. or higher and 2100° C. or lower to obtain a second heat-treated product.