US 11,890,681 B2
Method for producing bonded object and semiconductor device and copper bonding paste
Yuki Kawana, Tokyo (JP); Hideo Nakako, Tokyo (JP); Motohiro Negishi, Tokyo (JP); Chie Sugama, Tokyo (JP); Yoshinori Ejiri, Tokyo (JP); and Yuichi Yanaka, Tokyo (JP)
Assigned to RESONAC CORPORATION, Tokyo (JP)
Appl. No. 17/296,986
Filed by Showa Denko Materials Co., Ltd., Tokyo (JP)
PCT Filed Nov. 29, 2018, PCT No. PCT/JP2018/044068
§ 371(c)(1), (2) Date May 26, 2021,
PCT Pub. No. WO2020/110271, PCT Pub. Date Jun. 4, 2020.
Prior Publication US 2022/0028824 A1, Jan. 27, 2022
Int. Cl. B22F 7/00 (2006.01); B22F 7/06 (2006.01); H01L 23/00 (2006.01); B22F 1/054 (2022.01); B22F 1/10 (2022.01)
CPC B22F 7/00 (2013.01) [B22F 1/054 (2022.01); B22F 1/056 (2022.01); B22F 1/10 (2022.01); B22F 7/064 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 2224/29294 (2013.01); H01L 2224/29347 (2013.01); H01L 2224/8384 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method for producing a bonded object, comprising:
a step of preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in order; and
a step of sintering the copper bonding paste under a pressure of 0.1 to 1 MPa,
wherein the copper bonding paste contains metal particles and a dispersion medium,
a content of the metal particles with respect to a total mass of the copper bonding paste is 50 mass % or more, and
the metal particles contain 95 mass % or more of submicro copper particles having a volume average particle size of 0.12 μm or more and 0.8 μm or less with respect to a total mass of the metal particles.