CPC H10N 70/841 (2023.02) [H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8833 (2023.02)] | 20 Claims |
1. A resistive random-access memory (RRAM) device, comprising:
a bottom electrode, a resistive material layer, a high work function layer, a top electrode and a hard mask sequentially stacked on a substrate; and
high work function sidewall parts covering sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell.
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