US 11,871,684 B2
Semiconductor device including resistance changing layer and method of manufacturing the same
Jae Hyun Han, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Aug. 2, 2021, as Appl. No. 17/391,444.
Claims priority of application No. 10-2020-0144704 (KR), filed on Nov. 2, 2020.
Prior Publication US 2022/0140234 A1, May 5, 2022
Int. Cl. H10N 70/20 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/253 (2023.02) [H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising;
a substrate;
a gate structure disposed over the substrate, the gate structure including at least one gate electrode layer and at least one interlayer insulating layer that are alternately stacked over the substrate;
a hole pattern penetrating the gate structure over the substrate; and
a gate insulating layer, a channel layer, a resistor layer, and a resistance changing layer that are sequentially disposed on a sidewall surface of the gate structure within the hole pattern,
wherein each of the resistor layer and the resistance changing layer is disposed opposite to the gate insulating layer, based on the channel layer.