US 11,871,671 B2
Assembly of piezoelectric material substrate and supporting substrate, and method for manufacturing same
Yuji Hori, Owariasahi (JP); Takahiro Yamadera, Nagoya (JP); and Tatsuro Takagaki, Nagoya (JP)
Assigned to NGK INSULATORS, LTD., Nagoya (JP)
Filed by NGK INSULATORS, LTD., Nagoya (JP)
Filed on Jul. 21, 2020, as Appl. No. 16/934,460.
Application 16/934,460 is a continuation of application No. PCT/JP2018/042630, filed on Nov. 19, 2018.
Claims priority of application No. 2018-007912 (JP), filed on Jan. 22, 2018.
Prior Publication US 2020/0350485 A1, Nov. 5, 2020
Prior Publication US 2021/0265558 A9, Aug. 26, 2021
Int. Cl. H10N 30/072 (2023.01); H10N 30/086 (2023.01); H10N 30/853 (2023.01)
CPC H10N 30/072 (2023.02) [H10N 30/086 (2023.02); H10N 30/8542 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A method of producing a bonded body of a piezoelectric material substrate and a supporting substrate with a silicon oxide layer provided thereon, said piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, the method comprising the steps of:
irradiating an oxygen plasma onto a bonding surface of said piezoelectric material substrate at a temperature of 150° C. or lower to make a surface resistivity at said bonding surface 1.7×1015Ω/□ or higher; and
then bonding said bonding surface of said piezoelectric material substrate to a bonding surface of said silicon oxide layer.