CPC H10N 30/072 (2023.02) [H10N 30/086 (2023.02); H10N 30/8542 (2023.02)] | 5 Claims |
1. A method of producing a bonded body of a piezoelectric material substrate and a supporting substrate with a silicon oxide layer provided thereon, said piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, the method comprising the steps of:
irradiating an oxygen plasma onto a bonding surface of said piezoelectric material substrate at a temperature of 150° C. or lower to make a surface resistivity at said bonding surface 1.7×1015Ω/□ or higher; and
then bonding said bonding surface of said piezoelectric material substrate to a bonding surface of said silicon oxide layer.
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