US 11,871,590 B2
Thin film of metal oxide, organic electroluminescent device including thin film, photovoltaic cell including thin film, and manufacturing method of thin film
Hideo Hosono, Meguro-ku (JP); Yoshitake Toda, Meguro-ku (JP); Satoru Watanabe, Chiyoda-ku (JP); Toshinari Watanabe, Chiyoda-ku (JP); Kazuhiro Ito, Chiyoda-ku (JP); Naomichi Miyakawa, Chiyoda-ku (JP); and Nobuhiro Nakamura, Chiyoda-ku (JP)
Assigned to JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi (JP)
Filed by JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi (JP)
Filed on Jan. 19, 2021, as Appl. No. 17/152,142.
Application 17/152,142 is a division of application No. 16/169,078, filed on Oct. 24, 2018, abandoned.
Application 16/169,078 is a division of application No. 15/460,455, filed on Mar. 16, 2017, abandoned.
Application 15/460,455 is a continuation of application No. PCT/JP2015/076346, filed on Sep. 16, 2015.
Claims priority of application No. 2014-190364 (JP), filed on Sep. 18, 2014.
Prior Publication US 2021/0343961 A1, Nov. 4, 2021
Int. Cl. H10K 30/15 (2023.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01L 21/02 (2006.01); H01J 37/34 (2006.01); H01L 31/032 (2006.01); H10K 50/16 (2023.01); H10K 50/18 (2023.01); H10K 50/17 (2023.01); H10K 102/00 (2023.01); H10K 102/10 (2023.01); H01L 31/0256 (2006.01)
CPC H10K 30/152 (2023.02) [C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/3407 (2013.01); C23C 14/3414 (2013.01); C23C 14/352 (2013.01); H01J 37/3429 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 31/0324 (2013.01); H01L 2031/0344 (2013.01); H10K 50/16 (2023.02); H10K 50/171 (2023.02); H10K 50/18 (2023.02); H10K 2102/00 (2023.02); H10K 2102/102 (2023.02); Y02E 10/549 (2013.01); Y02P 70/50 (2015.11)] 11 Claims
OG exemplary drawing
 
1. A manufacturing method of manufacturing a thin film, the thin film comprising zinc (Zn), tin (Sn), silicon (Si) and oxygen (O); and wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is present in the thin film in an amount of greater than 15 mol % and less than or equal to 95 mol %,
the method comprising:
before forming the thin film in a vacuum chamber by a sputtering method,
reducing a pressure in the vacuum chamber to 8.0×10−4 Pa or less;
introducing a sputtering gas comprising oxygen into the vacuum chamber; and
setting the pressure in the vacuum chamber to 0.1 Pa or more but 5.0 Pa or less, to perform deposition of the thin film, and
depositing the thin film by depositing zinc (Zn), tin (Sn), silicon (Si), and oxygen (O), in the vacuum chamber in which air is exhausted and oxygen was introduced, by a pulsed laser deposition (PLD) method.