CPC H10K 30/152 (2023.02) [C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/3407 (2013.01); C23C 14/3414 (2013.01); C23C 14/352 (2013.01); H01J 37/3429 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 31/0324 (2013.01); H01L 2031/0344 (2013.01); H10K 50/16 (2023.02); H10K 50/171 (2023.02); H10K 50/18 (2023.02); H10K 2102/00 (2023.02); H10K 2102/102 (2023.02); Y02E 10/549 (2013.01); Y02P 70/50 (2015.11)] | 11 Claims |
1. A manufacturing method of manufacturing a thin film, the thin film comprising zinc (Zn), tin (Sn), silicon (Si) and oxygen (O); and wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is present in the thin film in an amount of greater than 15 mol % and less than or equal to 95 mol %,
the method comprising:
before forming the thin film in a vacuum chamber by a sputtering method,
reducing a pressure in the vacuum chamber to 8.0×10−4 Pa or less;
introducing a sputtering gas comprising oxygen into the vacuum chamber; and
setting the pressure in the vacuum chamber to 0.1 Pa or more but 5.0 Pa or less, to perform deposition of the thin film, and
depositing the thin film by depositing zinc (Zn), tin (Sn), silicon (Si), and oxygen (O), in the vacuum chamber in which air is exhausted and oxygen was introduced, by a pulsed laser deposition (PLD) method.
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