CPC H10B 41/27 (2023.02) [H10B 41/10 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02)] | 10 Claims |
1. A memory array comprising strings of memory cells, comprising:
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel material strings of memory cells extending through the insulative tiers and the conductive tiers; and
intervening material laterally-between and longitudinally-alongside immediately laterally-adjacent of the memory blocks, the intervening material comprising an upper metal material directly above and directly against a lower metal material, the lower metal material comprising a vertically-elongated seam therein, the upper metal material being devoid of any vertically-elongated seam therein,
wherein the upper and lower metal materials are more than 70% to less than 100% by weight of the same composition relative one another; the upper metal material having at least one alloy component in greater concentration than such at least one alloy component, if any, in the lower metal material; said alloy component comprising a metal element and a non-metal element.
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