US 11,871,566 B2
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
Collin Howder, Meridian, ID (US); and Chet E. Carter, Boise, ID (US)
Filed by Lodestar Licensing Group, LLC, Evanston, IL (US)
Filed on Feb. 1, 2022, as Appl. No. 17/590,052.
Application 17/590,052 is a division of application No. 16/787,914, filed on Feb. 11, 2020, granted, now 11,276,701.
Prior Publication US 2022/0157843 A1, May 19, 2022
Int. Cl. H10B 41/27 (2023.01); H10B 41/10 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01)
CPC H10B 41/27 (2023.02) [H10B 41/10 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A memory array comprising strings of memory cells, comprising:
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel material strings of memory cells extending through the insulative tiers and the conductive tiers; and
intervening material laterally-between and longitudinally-alongside immediately laterally-adjacent of the memory blocks, the intervening material comprising an upper metal material directly above and directly against a lower metal material, the lower metal material comprising a vertically-elongated seam therein, the upper metal material being devoid of any vertically-elongated seam therein,
wherein the upper and lower metal materials are more than 70% to less than 100% by weight of the same composition relative one another; the upper metal material having at least one alloy component in greater concentration than such at least one alloy component, if any, in the lower metal material; said alloy component comprising a metal element and a non-metal element.