US 11,870,416 B2
Bulk acoustic wave (BAW) resonator with patterned layer structures, devices and systems
Dariusz Burak, Fort Collins, CO (US); Kevin J. Grannen, Thornton, CO (US); and Jack Lenell, Fort Collins, CO (US)
Assigned to Qxonix Inc., Irvine, CA (US)
Filed by QXONIX, INC., Irvine, CA (US)
Filed on Dec. 29, 2021, as Appl. No. 17/564,216.
Application 17/564,216 is a continuation of application No. 17/380,011, filed on Jul. 20, 2021.
Application 17/380,011 is a continuation of application No. PCT/US2020/043733, filed on Jul. 27, 2020.
Application 17/380,011 is a continuation of application No. 16/940,172, filed on Jul. 27, 2020, granted, now 11,101,783, issued on Aug. 24, 2021.
Claims priority of provisional application 62/881,091, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,074, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,085, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,087, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,061, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,094, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,077, filed on Jul. 31, 2019.
Prior Publication US 2022/0140803 A1, May 5, 2022
Int. Cl. H03H 9/17 (2006.01); H03H 9/02 (2006.01); H03H 9/205 (2006.01); H03H 9/13 (2006.01); H03H 9/56 (2006.01); H03H 3/02 (2006.01); H03H 9/54 (2006.01)
CPC H03H 9/02259 (2013.01) [H03H 3/02 (2013.01); H03H 9/0207 (2013.01); H03H 9/0211 (2013.01); H03H 9/02015 (2013.01); H03H 9/02102 (2013.01); H03H 9/02157 (2013.01); H03H 9/13 (2013.01); H03H 9/131 (2013.01); H03H 9/17 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/205 (2013.01); H03H 9/54 (2013.01); H03H 9/568 (2013.01); H03H 2003/021 (2013.01); H03H 2009/02165 (2013.01)] 33 Claims
OG exemplary drawing
 
1. A bulk acoustic wave (BAW) resonator comprising:
a substrate;
first and second piezoelectric layers acoustically coupled with one another, in which the first piezoelectric layer has a first piezoelectric axis orientation, and the second piezoelectric layer has a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first piezoelectric layer, and in which the first and second piezoelectric layers have respective thicknesses to facilitate a main resonant frequency of the bulk acoustic wave resonator; and
an acoustic reflector electrode including at least a first pair of metal electrode layers electrically and acoustically coupled with the first and second piezoelectric layers, the acoustic reflector electrode including at least a patterned layer, the patterned layer including at least a step mass feature acoustically coupled with the first and second piezoelectric layers.