CPC H03H 9/02259 (2013.01) [H03H 3/02 (2013.01); H03H 9/0207 (2013.01); H03H 9/0211 (2013.01); H03H 9/02015 (2013.01); H03H 9/02102 (2013.01); H03H 9/02157 (2013.01); H03H 9/13 (2013.01); H03H 9/131 (2013.01); H03H 9/17 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/205 (2013.01); H03H 9/54 (2013.01); H03H 9/568 (2013.01); H03H 2003/021 (2013.01); H03H 2009/02165 (2013.01)] | 33 Claims |
1. An acoustic wave device comprising:
a substrate;
a stack including at least first and second piezoelectric layers, in which the first piezoelectric layer has a first piezoelectric axis orientation, and the second piezoelectric layer has a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first piezoelectric layer;
a top acoustic reflector electrode including at least a first pair of top metal electrode layers and a second pair of top metal electrode layers, the first pair of top metal electrode layers being electrically and acoustically coupled with the second piezoelectric layer, and the second pair of top metal electrode layers being electrically and acoustically coupled with the second piezoelectric layer; and
a bottom acoustic reflector electrode including at least a first pair of bottom metal electrode layers and a second pair of bottom metal electrode layers, the first pair of bottom metal electrode layers being electrically and acoustically coupled with the second piezoelectric layer, and the second pair of bottom metal electrode layers being electrically and acoustically coupled with the second piezoelectric layer, in which the first and second piezoelectric layers have respective thicknesses to facilitate the acoustic wave device having a main resonant frequency that is in an Institute of Electrical and Electronic Engineers (IEEE) band in one of a Ku band, a K band, a Ka band, a V band, and a W band.
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