US 11,870,219 B2
Laser diode and method for manufacturing the same
Zhibai Zhong, Xiamen (CN); Tao Ye, Xiamen (CN); Min Zhang, Xiamen (CN); Shao-Hua Huang, Xiamen (CN); and Shuiqing Li, Xiamen (CN)
Assigned to Quanzhou San'An Semiconductor Technology Co., Ltd., Nanan (CN)
Filed by Xiamen Sanan Optoelectronics Technology Co., LTD, Xiamen (CN)
Filed on Apr. 12, 2021, as Appl. No. 17/227,534.
Claims priority of application No. 202010518817.3 (CN), filed on Jun. 9, 2020.
Prior Publication US 2021/0384702 A1, Dec. 9, 2021
Int. Cl. H01S 5/22 (2006.01); H01S 5/042 (2006.01); H01S 5/32 (2006.01); H01S 5/16 (2006.01)
CPC H01S 5/222 (2013.01) [H01S 5/04256 (2019.08); H01S 5/3211 (2013.01); H01S 5/168 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A laser diode, comprising:
a substrate having a first surface and a second surface that are opposite to each other;
an epitaxial structure that is disposed on said first surface of said substrate and that is formed with a ridge structure on a side of said epitaxial structure opposite to said substrate;
an electrode contacting layer disposed on a top surface of said ridge structure; and
an optical cladding layer having a refractive index smaller than that of said electrode contacting layer, and including a first cladding portion which covers side walls of said ridge structure, and a second cladding portion which is disposed on a portion of said top surface of said ridge structure,
wherein said optical cladding layer and said electrode contacting layer have a total thickness that is an odd multiple of λ/4n, in which λ is a wavelength of a light emitted by said laser diode, and n is an integer not smaller than 1.