US 11,870,214 B2
Semiconductor laser and method of production for optoelectronic semiconductor parts
Jörg Erich Sorg, Regensburg (DE); Harald König, Bernhardswald (DE); Alfred Lell, Maxhütte—Haidhof (DE); Florian Peskoller, Ingolstadt (DE); Karsten Auen, Regensburg (DE); Roland Schulz, Regensburg (DE); Herbert Brunner, Sinzing (DE); Frank Singer, Regenstauf (DE); and Roland Hüttinger, Kaufering (DE)
Assigned to OSRAM OLED GMBH, Regensburg (DE)
Filed by OSRAM OLED GmbH, Regensburg (DE)
Filed on Oct. 21, 2022, as Appl. No. 17/971,156.
Application 17/971,156 is a division of application No. 16/754,723, previously published as PCT/EP2018/077313, filed on Oct. 8, 2018.
Claims priority of application No. 10 2017 123 798.4 (DE), filed on Oct. 12, 2017.
Prior Publication US 2023/0068945 A1, Mar. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/028 (2006.01); H01S 5/0236 (2021.01); H01S 5/02253 (2021.01); H01S 5/02326 (2021.01); H01S 5/00 (2006.01)
CPC H01S 5/028 (2013.01) [H01S 5/0236 (2021.01); H01S 5/02253 (2021.01); H01S 5/02326 (2021.01); H01S 5/0078 (2013.01); H01S 5/0087 (2021.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor laser comprising
a carrier,
an edge-emitting laser diode which is mounted on the carrier and which has an active zone for generating laser radiation and has a facet with a radiation exit region,
a protective cover, and
an adhesive, by means of which the protective cover is fastened to the facet and to a side surface of the carrier, wherein
an average distance between a light entrance side of the protective cover and the facet is at most 15 μm,
the semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation, and
the protective cover is formed as a biconvex lens, wherein a maximum bulge of the light entrance side towards the facet lies outside an optical axis of the laser radiation such that laser radiation reflected at the light entrance side is kept away from the radiation exit region and/or such that a resonator of the laser diode remains undisturbed by the reflected laser radiation.