US 11,870,130 B2
Antenna apparatus and fabrication method
Eung San Cho, Torrance, CA (US); Ashutosh Baheti, Munich (DE); and Saverio Trotta, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jul. 27, 2020, as Appl. No. 16/939,392.
Prior Publication US 2022/0029271 A1, Jan. 27, 2022
Int. Cl. H01Q 1/22 (2006.01); H01L 23/66 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01)
CPC H01Q 1/2283 (2013.01) [H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 23/49816 (2013.01); H01L 23/66 (2013.01); H01L 2223/6677 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor die comprising a radio frequency (RF) circuit;
a first dielectric layer disposed over a first surface of the semiconductor die;
an antenna layer disposed over a surface of the first dielectric layer; and
an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein:
the semiconductor die comprises an opening; and
the antenna feeding structure comprises:
a first portion comprising a first via arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die,
a second portion comprising a second via arranged through the first dielectric layer and extending from the first surface of the semiconductor die to the antenna layer, and
a third portion comprising a planar conductive feature disposed on the first surface of the semiconductor die, the third portion conductively connecting the first portion to the second portion.