US 11,870,010 B2
Light-emitting diode
Wen-Yu Lin, Xiamen (CN); Meng-Hsin Yeh, Xiamen (CN); Yun-Ming Lo, Xiamen (CN); Chien-Yao Tseng, Xiamen (CN); and Chung-Ying Chang, Xiamen (CN)
Assigned to Xiamen San'An Optoelectronics Co., Ltd., Xiamen (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed on Mar. 31, 2022, as Appl. No. 17/657,374.
Application 17/657,374 is a continuation of application No. 16/883,585, filed on May 26, 2020, granted, now 11,296,256.
Application 16/883,585 is a continuation in part of application No. PCT/CN2018/113517, filed on Nov. 1, 2018.
Claims priority of application No. 201711218871.0 (CN), filed on Nov. 28, 2017.
Prior Publication US 2022/0223758 A1, Jul. 14, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/28 (2010.01); H01L 25/075 (2006.01)
CPC H01L 33/285 (2013.01) [H01L 25/0756 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting diode, comprising:
an N-type cladding layer;
a superlattice structure disposed on said N-type cladding layer;
an active layer directly disposed on said superlattice structure;
a P-type electron-blocking layer disposed on said active layer; and
a P-type cladding layer disposed on said P-type electron-blocking layer,
wherein:
said superlattice structure includes a first superlattice unit that contains at least one first layered element, said first layered element having a sub-layer which is made of a nitride-based semiconductor material including Al, and which has an energy band gap greater than that of said electron-blocking layer;
said P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of said P-type cladding layer.