US 11,870,006 B2
Enhanced efficiency of LED structure with n-doped quantum barriers
Jian Yin, Waterloo (CA); Dayan Ban, Waterloo (CA); Ehsanollah Fathi, Waterloo (CA); and Gholamreza Chaji, Waterloo (CA)
Assigned to VueReal Inc., Waterloo (CA)
Filed by VueReal Inc., Waterloo (CA)
Filed on Oct. 16, 2020, as Appl. No. 17/073,136.
Application 17/073,136 is a continuation of application No. 16/423,407, filed on May 28, 2019, granted, now 10,840,408.
Prior Publication US 2021/0050477 A1, Feb. 18, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/14 (2010.01); H01L 33/30 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/025 (2013.01); H01L 33/145 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method to reduce ratio of a surface area to a volume in quantum-wells, the method comprising:
providing an n-doped layer, 5×5 μm2 microLEDs with a single quantum well structure, and a p-doped layer, wherein the single quantum well structure includes a quantum well layer disposed between n-doped barrier layers;
achieving a 128% IQE improvement at 20 A/cm2
having growth substrate;
having an n-type layer formed on the growth substrate;
having single quantum well structure active zone grown on the n-type layer to generate radiation;
having an electron blocking layer; and
a p-type layer.