CPC H01L 33/06 (2013.01) [H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/025 (2013.01); H01L 33/145 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01)] | 6 Claims |
1. A method to reduce ratio of a surface area to a volume in quantum-wells, the method comprising:
providing an n-doped layer, 5×5 μm2 microLEDs with a single quantum well structure, and a p-doped layer, wherein the single quantum well structure includes a quantum well layer disposed between n-doped barrier layers;
achieving a 128% IQE improvement at 20 A/cm2
having growth substrate;
having an n-type layer formed on the growth substrate;
having single quantum well structure active zone grown on the n-type layer to generate radiation;
having an electron blocking layer; and
a p-type layer.
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