US 11,870,005 B2
QW-QWD LED with suppressed auger recombination
Alexander L. Efros, Annandale, VA (US); and Michael Shur, Troy, NY (US)
Assigned to The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed by The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed on Jun. 30, 2020, as Appl. No. 16/916,690.
Claims priority of provisional application 63/030,661, filed on May 27, 2020.
Claims priority of provisional application 62/869,045, filed on Jul. 1, 2019.
Prior Publication US 2021/0005779 A1, Jan. 7, 2021
Int. Cl. H01L 33/00 (2010.01); H01L 33/06 (2010.01); B82Y 20/00 (2011.01); H01L 33/24 (2010.01)
CPC H01L 33/06 (2013.01) [B82Y 20/00 (2013.01); H01L 33/24 (2013.01)] 9 Claims
OG exemplary drawing
 
1. An optoelectronic device, comprising:
at least one quantum well, wherein the at least one quantum well has a quantum well band gap; and
at least one quantum dot incorporated in the quantum well, wherein the at least one quantum dot has a quantum dot band gap;
wherein the quantum well band gap is larger than the quantum dot band gap, wherein the at least one quantum dot comprises periodic quantum dot arrays in that at least one quantum well, wherein the periodic quantum dot arrays have an effective barrier height, a characteristic tunneling length, and a distance between quantum dots, and wherein the effective barrier height is adjusted by adjusting the distance between quantum dots and by having a distance between quantum dots larger than the characteristic tunneling length.