US 11,869,992 B2
In-cell bypass diode
Seung Bum Rim, Palo Alto, CA (US); and Gabriel Harley, Mountain View, CA (US)
Assigned to Maxeon Solar Pte. Ltd., Singapore (SG)
Filed by Maxeon Solar Pte. Ltd., Singapore (SG)
Filed on Oct. 21, 2022, as Appl. No. 17/971,369.
Application 17/971,369 is a division of application No. 16/881,705, filed on May 22, 2020, granted, now 11,508,860.
Application 15/220,273 is a division of application No. 14/472,232, filed on Aug. 28, 2014, granted, now 9,425,337, issued on Aug. 23, 2016.
Application 16/881,705 is a continuation of application No. 15/220,273, filed on Jul. 26, 2016, granted, now 10,665,739, issued on May 26, 2020.
Claims priority of provisional application 62/004,808, filed on May 29, 2014.
Prior Publication US 2023/0038148 A1, Feb. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/0443 (2014.01); H01L 31/02 (2006.01); H01L 31/0368 (2006.01); H01L 31/18 (2006.01); H01L 27/142 (2014.01)
CPC H01L 31/0443 (2014.12) [H01L 27/1421 (2013.01); H01L 31/02008 (2013.01); H01L 31/03682 (2013.01); H01L 31/1804 (2013.01); H01L 31/188 (2013.01); Y02E 10/50 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11)] 4 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a P-N junction disposed above a first portion of a substrate of the solar cell, wherein the P-N junction is coupled, via a metallization structure, to a doped region disposed in or above a second portion of the substrate, and
wherein the first and second portions of the substrate are completely separated with a first groove, wherein the first groove exposes a portion of the metallization structure.