CPC H01L 29/7371 (2013.01) [H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/66242 (2013.01)] | 17 Claims |
1. A structure comprising:
a collector in a semiconductor substrate;
a subcollector in the semiconductor substrate;
an intrinsic base over the subcollector;
an extrinsic base adjacent to the intrinsic base;
an emitter over the intrinsic base;
an isolation structure between the extrinsic base and the emitter and which overlaps the subcollector; and
a marker layer underneath the extrinsic base and which also covers an upper surface of the emitter.
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