CPC H01L 29/42324 (2013.01) [G11C 16/10 (2013.01); H01L 29/40114 (2019.08); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01)] | 21 Claims |
1. A steep-slope field-effect transistor, comprising:
a source, a channel region, and a drain formed on a substrate;
a gate insulating film formed on an upper portion of the channel region;
a floating gate formed on an upper portion of the gate insulating film;
a transition layer formed on an upper portion of the floating gate; and
a control gate formed on an upper portion of the transition layer;
wherein the steep-slope field-effect transistor applies a potential of a reference voltage or more to the control gate to generate a potential difference between the control gate and the floating gate and discharges or brings in at least one charge stored in the floating gate.
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