US 11,869,948 B2
Power semiconductor device with reduced strain
Daniel Jenner Lichtenwalner, Raleigh, NC (US); Edward Robert Van Brunt, Raleigh, NC (US); Thomas E. Harrington, III, Carrollton, TX (US); Shadi Sabri, Apex, NC (US); Brett Hull, Raleigh, NC (US); Brice McPherson, Fayetteville, AR (US); and Joe W. McPherson, Plano, TX (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Feb. 17, 2021, as Appl. No. 17/177,641.
Prior Publication US 2022/0262909 A1, Aug. 18, 2022
Int. Cl. H01L 29/40 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/404 (2013.01) [H01L 29/1608 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a drift layer that includes an active region;
a runner electrode on the drift layer that extends along a runner electrode path;
and
a runner electrode strain relief region that comprises a closed region in which electrically conductive material is not provided that is surrounded by the runner electrode when the runner electrode is viewed from above.