US 11,869,946 B2
Etch-less AlGaN GaN trigate transistor
Kon Hoo Teo, Lexington, MA (US); and Nadim Chowdhury, Cambridge, MA (US)
Assigned to Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US)
Filed by Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US)
Filed on Mar. 26, 2020, as Appl. No. 16/830,317.
Prior Publication US 2021/0305373 A1, Sep. 30, 2021
Int. Cl. H01L 29/00 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/2003 (2013.01) [H01L 21/02304 (2013.01); H01L 21/0415 (2013.01); H01L 29/0615 (2013.01); H01L 29/1066 (2013.01); H01L 29/7783 (2013.01); H01L 29/7787 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A field effect transistor, comprising:
a source;
a gate;
a drain;
a semiconductor region under the source, the gate and the drain, such that the semiconductor region includes a gallium nitride (GaN) layer and a three nitride (III-N) layer; and
a sub-region of the semiconductor region underneath the gate doped with Mg ions at selective locations in the sub-region, wherein each of the selective locations doped with Mg ions in the sub-region has a profile, such that the profile includes a vertical profile length and a profile width, and wherein the profiles form a pattern, such that profile widths of the profiles increase along a direction from a first width end to a second width end of the field effect transistor.