CPC H01L 29/167 (2013.01) [H01L 21/041 (2013.01); H01L 29/1606 (2013.01); H01L 29/4908 (2013.01); H01L 29/66045 (2013.01); H01L 29/78618 (2013.01); H01L 29/78684 (2013.01)] | 5 Claims |
1. A graphene-based TFT comprising:
a gate electrode;
a gate insulating layer disposed on the gate electrode;
an active layer including a TiO2-x layer directly disposed on and above a partial region of the gate insulating layer and a nitrogen-doped graphene layer directly disposed on and above the TiO2-x layer, which are formed by directly growing a first graphene layer after depositing a Ti layer on the gate insulating layer in an oxygen-free atmosphere and then doping the first graphene layer with nitrogen;
a first electrode disposed on a region of one side of the active layer; and
a second electrode disposed on a region of the other side of the active layer.
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