US 11,869,945 B2
Graphene-based TFT comprising nitrogen-doped graphene layer as active layer
Soon-Gil Yoon, Daejeon (KR); Byeong-Ju Park, Daejeon (KR); and Yi-Re Han, Daejeon (KR)
Assigned to THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC), Daejeon (KR)
Appl. No. 17/428,501
Filed by The Industry & Academic Cooperation in Chungnam National University (IAC), Daejeon (KR)
PCT Filed Oct. 25, 2019, PCT No. PCT/KR2019/014120
§ 371(c)(1), (2) Date Aug. 4, 2021,
PCT Pub. No. WO2020/171341, PCT Pub. Date Aug. 27, 2020.
Claims priority of application No. 10-2019-0019924 (KR), filed on Feb. 20, 2019.
Prior Publication US 2022/0109052 A1, Apr. 7, 2022
Int. Cl. H01L 29/167 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/167 (2013.01) [H01L 21/041 (2013.01); H01L 29/1606 (2013.01); H01L 29/4908 (2013.01); H01L 29/66045 (2013.01); H01L 29/78618 (2013.01); H01L 29/78684 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A graphene-based TFT comprising:
a gate electrode;
a gate insulating layer disposed on the gate electrode;
an active layer including a TiO2-x layer directly disposed on and above a partial region of the gate insulating layer and a nitrogen-doped graphene layer directly disposed on and above the TiO2-x layer, which are formed by directly growing a first graphene layer after depositing a Ti layer on the gate insulating layer in an oxygen-free atmosphere and then doping the first graphene layer with nitrogen;
a first electrode disposed on a region of one side of the active layer; and
a second electrode disposed on a region of the other side of the active layer.