US 11,869,929 B2
Laminated capacitor and method for manufacturing the same
Jun Xia, Hefei (CN); and Shijie Bai, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Anhui (CN)
Filed on Aug. 16, 2021, as Appl. No. 17/402,735.
Application 17/402,735 is a continuation of application No. PCT/CN2021/094216, filed on May 17, 2021.
Claims priority of application No. 202010550132.7 (CN), filed on Jun. 16, 2020.
Prior Publication US 2021/0391414 A1, Dec. 16, 2021
Int. Cl. H10B 12/00 (2023.01); H01L 49/02 (2006.01)
CPC H01L 28/87 (2013.01) [H01L 28/91 (2013.01); H10B 12/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a laminated capacitor, comprising:
providing a substrate;
forming a first isolation insulation spacer and a plurality of discrete bottom bonding pads arranged in the first isolation insulation spacer on the substrate;
forming a first sub-capacitor structure on the first isolation insulation spacer and the bottom bonding pads, which comprises a plurality of discrete bottom electrodes, a plurality of discrete top electrodes, and a dielectric medium located between the bottom electrodes and the top electrodes, wherein the plurality of bottom bonding pads are respectively electrically connected with the plurality of bottom electrodes in one-to-one correspondence; and
performing an operation of sequentially forming a nth connection structure and a nth sub-capacitor structure on the first sub-capacitor structure from n=1 to n=N, wherein N is an integer greater than or equal to 1,
wherein the laminated capacitor finally has N connection structures and N+1 sub-capacitor structures which are alternately arranged along a direction perpendicular to the substrate.