CPC H01L 28/56 (2013.01) [H01L 28/60 (2013.01); H10B 12/315 (2023.02); H10B 12/34 (2023.02)] | 26 Claims |
1. An electrical device comprising:
a lower electrode;
an upper electrode isolated from direct contact with the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode,
wherein the dielectric layer comprises a first metal oxide area and a second metal oxide area, each having a dielectric constant of 20 or more and 70 or less; and
a third metal oxide area between the first metal oxide area and the second metal oxide area, the third metal oxide area including a crystalline structure and comprising boron (B) and at least one of Al, Mg, Si, or Be,
wherein a boron content in the third metal oxide area is greater than a boron content in each of the first and second metal oxide areas.
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