US 11,869,926 B2
High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same
Jeonggyu Song, Seongnam-si (KR); Younsoo Kim, Yongin-si (KR); Jooho Lee, Hwaseong-si (KR); and Narae Han, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 12, 2021, as Appl. No. 17/146,894.
Claims priority of application No. 10-2020-0111687 (KR), filed on Sep. 2, 2020.
Prior Publication US 2022/0069065 A1, Mar. 3, 2022
Int. Cl. H10B 12/00 (2023.01); H01L 49/02 (2006.01)
CPC H01L 28/56 (2013.01) [H01L 28/60 (2013.01); H10B 12/315 (2023.02); H10B 12/34 (2023.02)] 26 Claims
OG exemplary drawing
 
1. An electrical device comprising:
a lower electrode;
an upper electrode isolated from direct contact with the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode,
wherein the dielectric layer comprises a first metal oxide area and a second metal oxide area, each having a dielectric constant of 20 or more and 70 or less; and
a third metal oxide area between the first metal oxide area and the second metal oxide area, the third metal oxide area including a crystalline structure and comprising boron (B) and at least one of Al, Mg, Si, or Be,
wherein a boron content in the third metal oxide area is greater than a boron content in each of the first and second metal oxide areas.