US 11,869,917 B2
Integrated sensor for lifetime characterization
Eric A. G. Webster, Santa Clara, CA (US); Changhoon Choi, Palo Alto, CA (US); Dajiang Yang, San Jose, CA (US); Xin Wang, San Jose, CA (US); Todd Rearick, Cheshire, CT (US); Kyle Preston, Guilford, CT (US); Ali Kabiri, Guilford, CT (US); and Gerard Schmid, Guilford, CT (US)
Assigned to Quantum-Si Incorporated, Branford, CT (US)
Filed by Quantum-Si Incorporated, Branford, CT (US)
Filed on Jan. 14, 2021, as Appl. No. 17/149,574.
Claims priority of provisional application 62/961,133, filed on Jan. 14, 2020.
Prior Publication US 2021/0217800 A1, Jul. 15, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14643 (2013.01) [H01L 27/14683 (2013.01)] 28 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a photodetection region;
a charge storage region electrically coupled to the photodetection region and configured to receive charge carriers from the photodetection region;
a readout region electrically coupled to the charge storage region and configured to receive charge carriers from the charge storage region;
a drain region electrically coupled to the photodetection region and configured to receive charge carriers from the photodetection region and transfer the received charge carriers to a direct current (DC) voltage for draining the charge carriers from the photodetection region; and
an at least partially opaque and at least partially insulative layer disposed above or below at least a portion of the photodetection region, the at least partially opaque and at least partially insulative layer having a triangular-shaped opening configured to receive dopants therethrough,
wherein the photodetection region is configured to induce an intrinsic electric field in a first direction from the photodetection region to the drain region and from the photodetection region to the charge storage region.