US 11,869,899 B2
GOA circuit, array substrate and display device
Ruifang Du, Beijing (CN); Lanzhou Ma, Beijing (CN); Haijiao Qian, Beijing (CN); and Xiaoye Ma, Beijing (CN)
Assigned to HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed by HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Anhui (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed on Jun. 24, 2021, as Appl. No. 17/357,841.
Claims priority of application No. 202022181710.2 (CN), filed on Sep. 27, 2020.
Prior Publication US 2022/0102383 A1, Mar. 31, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 23/60 (2006.01); H01L 25/18 (2023.01)
CPC H01L 27/124 (2013.01) [H01L 23/60 (2013.01); H01L 25/18 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A Gate on Array (GOA) circuit comprising:
a GOA area, wherein the GOA area comprises a plurality of GOA unit circuits cascaded with each other; and
a lead area, wherein at least one Start Vertical (STV) signal line and at least one Non-Start Vertical (non-STV) signal line are arranged in the lead area, each STV signal line and each non-STV signal line is connected to at least one GOA unit circuit, and the non-STV signal line comprises at least one of a Vdd signal line, a clock (Clk) signal line, a Gate High Voltage (VGH) signal line and a Gate Low Voltage (VGL) signal line; a projection of the at least one STV signal line on the lead area does not overlap a projection of the at least one non-STV signal line on the lead area;
wherein the GOA circuit further comprises an electro-static discharge electrode disposed at a different layer from the STV signal line, a projection of the electro-static discharge electrode on the lead area overlaps a projection of the STV signal line on the lead area, and a gate insulation layer is provided between the electro-static discharge electrode and the STV signal line.