US 11,869,893 B2
Stacked field effect transistor with wrap-around contacts
Ruilong Xie, Niskayuna, NY (US); Chun-Chen Yeh, Danbury, CT (US); Alexander Reznicek, Troy, NY (US); and Dechao Guo, Niskayuna, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Oct. 27, 2021, as Appl. No. 17/511,647.
Application 17/511,647 is a division of application No. 16/801,904, filed on Feb. 26, 2020, granted, now 11,201,153.
Prior Publication US 2022/0052047 A1, Feb. 17, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/165 (2006.01); H01L 29/06 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 21/02532 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/165 (2013.01); H01L 29/41758 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a nanosheet stack over a substrate, the nanosheet stack comprising a top portion and a bottom portion separated by a dielectric spacer;
a plurality of vertically stacked first source or drain (S/D) regions, each of the first S/D regions on a sidewall of a different nanosheet in the bottom portion of the nanosheet stack, each of the first S/D regions confined to the respective sidewall of one nanosheet such that none of the plurality of first S/D regions merge and each sidewall of the different nanosheets in the bottom portion is covered by a separate first S/D region;
a plurality of vertically stacked second S/D regions, each of the second S/D regions on a sidewall of a different nanosheet in the top portion of the nanosheet stack, each of the second S/D regions confined to the respective sidewall of one nanosheet such that none of the plurality of second S/D regions merge and each sidewall of the different nanosheets in the top portion is covered by a separate second S/D region;
a first wrap-around contact formed over the first plurality of S/D regions; and
a second wrap-around contact formed over the second plurality of S/D regions.