US 11,869,885 B2
Silicon controlled rectifier
Christian Cornelius Russ, Diedorf (DE); Gabriel-Dumitru Cretu, Munich (DE); and Filippo Magrini, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 22, 2022, as Appl. No. 17/892,601.
Application 17/892,601 is a division of application No. 16/918,384, filed on Jul. 1, 2020, granted, now 11,508,717.
Claims priority of application No. 19184043 (EP), filed on Jul. 3, 2019.
Prior Publication US 2022/0399327 A1, Dec. 15, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 29/74 (2006.01)
CPC H01L 27/0262 (2013.01) [H01L 29/7408 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A silicon controlled rectifier (SCR), comprising:
a semiconductor body including a first main surface;
an active device region;
a first, a second, a third and a fourth surface contact area at the first main surface and arranged directly one after another along a first lateral direction, wherein the semiconductor body is electrically contacted at each of the first to fourth surface contact areas;
a first, a second, a third and a fourth SCR region, wherein the first and third SCR regions are of a first conductivity type and directly adjoin the first and third surface contact areas, respectively, and wherein the second and fourth SCR regions are of a second conductivity type and directly adjoin the second and fourth surface contact areas, respectively; and
a first well region of the first conductivity type,
wherein the first SCR region is electrically connected to the fourth SCR region, and the second SCR region is electrically connected to the third SCR region, and
wherein the first well region at least partially overlaps the second SCR region at the first main surface.